Graphene Field-Effect Transistors for Millimeter Wave Amplifiers

Abstract

In this work, we analyze high frequency performance of graphene field-effect transistors (GFETs), applying models of drain resistance, carrier velocity and saturation velocity. This allows us to identify main limitations and propose an approach most promising for further development of the GFETs suitable for advanced mm-wave amplifiers. Analysis indicates, that the saturation velocity of charge carriers in the GFETs can be increased up to 5.107 cm/s via encapsulating graphene by hexagonal boron nitride layers, with corresponding increase of extrinsic maximum frequency of oscillation up to 180 GHz at 200 nm gate length.