Abstract
This paper covers the study on the properties of $TiO_2$ film deposited by atomic layer deposition (ALD) using TTIP and water at various temperatures including the low temperature range of 80% on the trench structure with the high aspect ratio of up to 75. However, relatively high concentration of impurities (C~4-7 at%) in the film was observed due to low deposition temperature.
Cite
CITATION STYLE
Park, W. H., Shin, J. W., Yang, B. C., Park, M.-J., Jang, D. Y., & An, J. (2016). Study on the Properties of TiO 2 Film Deposited by ALD at Low Temperature. Journal of the Microelectronics and Packaging Society, 23(2), 43–47. https://doi.org/10.6117/kmeps.2016.23.2.043
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