Design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier with forward body bias technique for wireless applications

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Abstract

This paper presents a design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier (UWB LNA) with forward body bias technique for wireless applications. The UWB LNA is designed and simulated using 0.13-μm technology in Cadence software. The proposed UWB LNA consists of two stage common-source (CS) amplifiers with a forward body bias technique. A source degenerated inductor is used at the first stage to achieve a wideband input matching and high linearity. At the second stage, a shunt-peaking inductor is employed to enhance gain at higher frequency. The simulation results indicate that the proposed UWB LNA achieves a power gain (S21) of 10 dB, an input return loss (S11) is less than -5 dB, a minimum noise figure (NF) of 8.5 dB in the frequency range of 3.1- 6.0 GHz with power dissipation of 17.2 mW. The linearity analysis shows a 1 dB compression point (P1dB) of -9 dBm and the third-order intermodulation intercept points (IIP3) of 4 dBm are achieved. The proposed UWB LNA's layout is 0.68 mm2.

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APA

Halim, N. F. A. B., Murad, S. A. Z., Harun, A., Isa, M. N. M., Mohyar, S. N., & Azizan, A. (2020). Design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier with forward body bias technique for wireless applications. In AIP Conference Proceedings (Vol. 2203). American Institute of Physics Inc. https://doi.org/10.1063/1.5142114

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