Gate Diffusion Input: A technique for fast digital circuits (implemented on 180 nm technology)

  • Sarkar S
  • Jain M
  • et al.
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Abstract

VLSI technology has developed over the years thereby enhancing the performance of chips in terms of three basic constraints viz. delay, power and area. Gate Diffusion Input technique is one such method which attempts to minimize the delay and power consumed by the circuit.The paper basically focuses on the implementation of the technique on combinational logic circuits and experimental delay results have been produced and these results have been compared with the conventional CMOS logic showing a reduction in delayand power-delay product using GDI.The graphical plots of digital circuits showing their transient behaviorhave also been presented. A comparative study between GDI and CMOS techniques showsGDI as the better onein terms of performance. However, GDI suffers from a few problems too, the most profound one being the problem in achieving full swing.

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Sarkar, S., Jain, M., Saha, A., & Rathi, A. (2014). Gate Diffusion Input: A technique for fast digital circuits (implemented on 180 nm technology). IOSR Journal of VLSI and Signal Processing, 4(2), 49–53. https://doi.org/10.9790/4200-04244953

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