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Band offsets and work function control in field effect transistors

  • Robertson J
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (2009) 27(1) 277-285
DOI: 10.1116/1.3072517
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Abstract

The article summarizes the development of metal gate materials and the control of the effective work function on high dielectric constant (high K) oxides for use in advanced Si field effect transistors. The Schottky barrier heights of metals on HfO2 are calculated accurately for ideal interfaces of various stoichiometries and for interfaces with defects.

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APA

Robertson, J. (2009). Band offsets and work function control in field effect transistors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 27(1), 277–285. https://doi.org/10.1116/1.3072517

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