Carrier concentration control of GaSb/GaInAsSb system

Abstract

The residual carrier concentration of GaSb and GaSb-lattice matched Ga 1-xInxAsySb1-y alloys (x = 0.12-0.26; y = 0.9x) grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) was studied as a function of growth temperature, V/III ratio and alloy composition. Typical carrier concentrations p ∼ 2-3×10 16 cm-3 were obtained for undoped GaSb grown by MBE at 480°C, by LPE from Ga-rich melt at low temperature (400°C), and by LPE from Sb-rich melts at ∼600°C. The native acceptor defect responsible of the high p-type residual doping in GaSb is reduced when the indium concentration is increased, and disappears for indium rich alloys (x = 0.23, 0.26). Tellurium compensation was used for controlled n-type doping in the (0.05-30) ×1017 cm-3 range. A maximum of free carrier concentration was 1.5×1018 cm-3 for LPE layers, 2×1018 cm-3 for MBE layers grown at 1.0 μm/h, 3.5×1018 cm-3 for MBE layers grown at 0.2 μm/h. SIMS measurements showed Te concentrations of more than 1020 at/cm3, suggesting the formation of ternary GaSb1-xTe x solid solution. © 2007 American Institute of Physics.