Integration of micro resistance thermometer detectors in AlGaN/GaN devices

Abstract

Temperature measurements in AlGaN/GaN high electron mobility transistors are required for proper device design, modeling and achieving appropriate reliability. These measurements usually require sophisticated equipment and extensive calibration. This study evaluates the feasibility of temperature measurements by integration of a Pt resistance thermal detector (RTD) in an "un-gated" transistor and evaluating their electrical interactions. The integrated RTD presents the advantage of being independent of the device. Micro RTD showed a linear response in the calibration interval (0 to 206 °C). Measured temperature values using the micro RTD are in agreement with 3D finite element simulations at multiple bias conditions in the "un-gated" transistor. Measurements show no noticeable electrical perturbation between the device and RTD under simultaneous operation.