Characterization of laser ablated silicon thin films

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Abstract

Using laser ablation, we deposited silicon layers consisting of clusters and crystalline domains onto glass, quartz, aluminum, titanium, copper, single-crystal silicon and single-crystal potassium bromide substrates. The microstructure and the morphology of the films were characterized by use of optical microscopy, laser scanning microscopy, atomic force microscopy, transmission electron microscopy, micro-Raman spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The results indicated that the deposited material was composed of microcrystalline droplets, typically 3.5 μm in diameter, separated by amorphous-like regions. The droplets were composed of crystalline material at their centers and an outer halo of nanometer-size particles. © 1999 Elsevier Science S.A. All rights reserved.

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Vijayalakshmi, S., Iqbal, Z., George, M. A., Federici, J., & Grebel, H. (1999). Characterization of laser ablated silicon thin films. Thin Solid Films, 339(1–2), 102–108. https://doi.org/10.1016/S0040-6090(98)01158-4

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