Photon-Assisted Electrochemical Construction of <0001>-n-ZnO/<111>-p-Cu 2 O Photovoltaic Devices with Intermediate TiO 2 Layer

  • Mohd Zamzuri M
  • Sasano J
  • Binti Mohamad F
  • et al.
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Abstract

The <111>-Cu 2 O/<0001>-ZnO photovoltaic (PV) device has been constructed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO 2 layer prepared by a sol-gel technique on the photovoltaic performance was investigated. The structural, optical, and electrical characterizations were carried out with XRD, FE-SEM, UV-Vis-NIR spectrophotometer, and solar simulator. The <0001>-ZnO/TiO 2 /<111>-Cu 2 O PV-devices showed a photovoltaic performance under AM1.5 illumination, and the performance changed depending on the preparation condition for the TiO 2 formation. The substrate-type <0001>-ZnO/TiO 2 /<111>-Cu 2 O PV device prepared under optimized condition showed a photovoltaic performance with the short-circuit current density of 2. 14 mAcm 2 .

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Mohd Zamzuri, M. Z., Sasano, J., Binti Mohamad, F., & Izaki, M. (2014). Photon-Assisted Electrochemical Construction of <0001>-n-ZnO/<111>-p-Cu 2 O Photovoltaic Devices with Intermediate TiO 2 Layer. ECS Transactions, 64(15), 21–26. https://doi.org/10.1149/06415.0021ecst

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