Abstract
In this paper we present a new concept for chemically amplified resist materials aimed at reduced line edge roughness and reduced outgassing. The concept is based on polymers that can be thermally depolymerized utilizing acid catalysis. The thermal depolymerization leads to small fragments in the exposed areas during the post exposure bake and therefore minimizes the influence of polymer and aggregate size as well as phase incompatibilities on the line edge roughness. On the other hand during exposure itself, if deprotection occurs, non volatile oligomers are generated and therefore polymer related outgassing is reduced.
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CITATION STYLE
Eschbaumer, C., Heusinger, N., Hohle, C., & Sebald, M. (2002). Chemically amplified main chain scission: New concept to reduce line edge roughness and outgassing. Journal of Photopolymer Science and Technology, 15(4), 673–676. https://doi.org/10.2494/photopolymer.15.673
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