Ultrafast photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

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Abstract

Picosecond photovoltaic effect in miscut Nb-doped SrTiO3 single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%-90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of exact cut Nb-doped SrTiO3 single crystal. A model based on terrace structure is put forward to explain the observation. © 2009 American Institute of Physics.

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Zhou, N., Zhao, K., Liu, H., Lu, Z., Zhao, H., Tian, L., … Zhao, S. (2009). Ultrafast photovoltaic effects in miscut Nb-doped SrTiO3 single crystals. Journal of Applied Physics, 105(8). https://doi.org/10.1063/1.3116555

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