Flip-chip integrated soi-cmos-mems fabrication technology

Abstract

A fully-dry, flip-chip fabrication technology was developed for the integration of high fill factor, silicon-on-insulator (SOI) structures and CMOS-MEMS actuators. An SOI mirror array with a fill factor of 95% and radius of curvature >1.3 m was fabricated on CMOS-MEMS electrothermal actuators using this technology. The unloaded actuators achieved an optical scan range of >92º. Following flip-chip bonding with high temperature epoxy, the structures were released using deep reactive ion etching (DRIE). Aspect ratio dependent etching (ARDE) modulated local structural silicon thickness on the CMOS-MEMS actuators and reduced notching and microtrenching on the posts of the SOI mirrors.