Abstract
We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a]] two-step" spacer layer incorporated in the devices studied which facilitated the growth of high material quality.
Cite
CITATION STYLE
Huang, C. I., Paulus, M. J., Bozada, C. A., Dudley, S. C., Evans, K. R., Stutz, C. E., … Cheney, M. E. (1987). AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio. Applied Physics Letters, 51(2), 121–123. https://doi.org/10.1063/1.98588
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