Abstract
The conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as ΔEc=0.50 eV and ΔEv=0.25 eV by the angle-resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett et al.
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CITATION STYLE
APA
Perfetti, P., Denley, D., Mills, K. A., & Shirley, D. A. (1978). Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction. Applied Physics Letters, 33(7), 667–670. https://doi.org/10.1063/1.90458
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