A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor

Abstract

In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, the physics-based surface potential model is derived by solving Poisson's equation at different channel regions. Then an explicit expression of drain current is analytically obtained based on the theory of band-to-band tunneling at the Schottky junction. The proposed model shows excellent agreement with TCAD simulations which have been calibrated with experimental data. Finally, the compactible model is implemented in Verilog-A language without convergence problem, and proven by the RFET-based logic circuit.