Abstract
Reconstructions of the GaN(0001) surface are studied for the first time. Using scanning tunneling microscopy and reflection high-energy electron diffraction, four primary structures are observed: 1 × 1, 3 × 3, 6 × 6, and c(6 × 12). On the basis of first-principles calculations, the 1 × 1 structure is shown to consist of a Ga monolayer bonded to a N-terminated GaN bilayer. From a combination of experiment and theory, it is argued that the 3 × 3 structure is an adatom-on-adlayer structure with one additional Ga atom per 3 × 3 unit cell. © 1997 American Physical Society.
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CITATION STYLE
Smith, A. R., Feenstra, R. M., Greve, D. W., Neugebauer, J., & Northrup, J. E. (1997). Reconstructions of the GaN(001) Surface. Physical Review Letters, 79(20), 3934–3937. https://doi.org/10.1103/PhysRevLett.79.3934
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