Effects of N2O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors

Abstract

We report on the effects of N2O plasma treatment time on the performance of self-aligned top-gate amorphous oxide thin-film transistors (TFTs). N2O plasma is treated on the surface of the active layer. It is shown that the treatment effect is time- dependent. With the increase of treatment time, the electrical characteristics and bias stress stability are improved significantly. However, adverse effects appear with the time prolonging due to the damage of excess plasma. The optimum performance of a- IGZO and a-IZO TFTs is obtained with the N2O plasma treatment time at 90s and 240s, respectively.