Set and Reset Properties of Phase Change Memory Cells with Double-Layer Chalcogenide Films (Ge[sub 2]Sb[sub 2]Te[sub 5] and Sb[sub 2]Te[sub 3])

Abstract

Phase change memory cells with monolayer chalcogenide film (Ge2Sb2Te5 or Sb2Te3) and double-layer chalcogenide films (Ge2Sb2Te5 and Sb2Te3) were successfully fabricated. Cells with double-layer chalcogenide films show the abilities of multilevel data storage and lower set threshold voltages than monolayer ones. A thermal model for reset process was applied to calculate the phase change power consumption of each cell. The cell with the structure like W/Ge2Sb2Te5/Sb2Te3/TiN/Al shows the lower power consumption and less reset time than the cell with the structure like W/Sb2Te3/Ge2Sb2Te5/TiN/Al. (c) 2007 The Electrochemical Society.