Formation and characteristics of Pb(Zr,Ti)O3 field-effect transistor with a SiO2 buffer layer

Abstract

Ferroelectric heterostnictures of AuTPb(Zr0.52Ti0.48)O3/SiO2/Si and Au/Pb(Zr0.52Ti0.48)O3/Si have been fabricated by using laser ablation technique. Electrical properties of these ferroelectric field-effect transistors have been characterized through both the current vs voltage and capacitance vs voltage (C-V) measurements. The C-V characteristics of Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si heterostructures demonstrate a polarization switching behavior, showing a memory window as much as 1 V at 1 kHz. In addition, the experimental results reveal that a SiO2 buffer layer is essential for memory properties in the Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si gate structure. © 1997 American Institute of Physics.