Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors

Abstract

We have studied in reduced pressure chemical vapor deposition the selective epitaxial growth (SEG) of Si and SiGe using a dichlorosilane+germane+hydrochloric acid chemistry. We have first of all highlighted the specifics of the SEG of Si on patterned wafers with a dichlorosilane+hydrochloric acid chemistry. We have then dealt with the SEG of SiGe, focusing notably on the so-called loading effects (increase of the SiGe growth rate and of the Ge concentration when switching over from a blanket to a dielectric-masked substrate). Finally, we have studied the thermal stability of typical Si/SiGe/Si stacks versus conventional anneals used nowadays for advanced devices in the microelectronics industry. All this knowledge can be used to selectively grow Si or Si/SiGe/Si stacks inside the Si windows of patterned wafers for the formation of raised sources and drains or for the channel engineering of p-type metal oxide semiconductor transistors. © 2003 Elsevier B.V. All rights reserved.