Modelling Ge/Si quantum dots using finite element analysis and atomistic simulation

Abstract

Finite Element Analysis (FEA) and atomistic simulations are used to model Ge/Si quantum dots. The three dimensional non-uniform composition profile in Ge(Si)/Si(001) quantum dots is calculated using atomistic modelling. The results are compared to experimental data from the literature. FEA is used to model the contact angle dependence of the strain energy of the QD. An equation is fitted to the modelled dataset describing the strain energy of a uniformly alloyed, pyramid shaped Ge/Si quantum dot as a function of the contact angle. © 2006 IOP Publishing Ltd.