Correlation between Electron Mobility and Static Dielectric Permittivity of n-InSb

Abstract

Direct analytical calculations of the static dielectric permittivity-dependent electron mobility due to different elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperatures. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed both when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.