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Planar betavoltaic converter creation with plasma-immersion ion implantation process

IOP Conference Series: Materials Science and Engineering (2016) 122(1)
DOI: 10.1088/1757-899X/122/1/012029
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Abstract

Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ∼ 1 uA/cm2 at reverse voltage -1 V.

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Rudenko, K. V., Miakonkih, A. V., Rogojin, A. E., Bogdanov, S. V., Sidorov, V. G., & Zelenkov, P. V. (2016). Planar betavoltaic converter creation with plasma-immersion ion implantation process. In IOP Conference Series: Materials Science and Engineering (Vol. 122). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/122/1/012029

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