Abstract
Si:H thin films were deposited using PECVD method at substrate temperature of 250°C with different hydrogen dilution. Structure investigations and hydrogen concentration estimation were performed using FTIR, Raman and UV-VIS spectroscopy. The IR and Raman spectra show various peak shifting when H dilution is changed. Band gaps of films were evaluated from the strong absorption regions in UV-VIS transmission spectra. The results demonstrate a transition from amorphous to nc/μc structure when hydrogen dilution increased. © 2009 IOP Publishing Ltd.
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Trung, T. Q., Jiri, S., Stuchlikova, H., Binh, L. K., Dinh, N. N., Khuong, H. K., … Nga, N. T. H. (2009). The effects of hydrogen dilution on structure of Si:H thin films deposited by PECVD. In Journal of Physics: Conference Series (Vol. 187). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/187/1/012035
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