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Site-controlled InGaN/GaN single-photon-emitting diode

Applied Physics Letters (2016) 108(15)
DOI: 10.1063/1.4945984
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Abstract

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

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Zhang, L., Teng, C. H., Ku, P. C., & Deng, H. (2016). Site-controlled InGaN/GaN single-photon-emitting diode. Applied Physics Letters, 108(15). https://doi.org/10.1063/1.4945984

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