Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the behaviors are in the three types depending on the symmetry. The recent observation of classified the negative magnetoresistance of MOSFET different is
CITATION STYLE
Hikami, S., Larkin, A. I., & Nagaoka, Y. (1980). Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System. Progress of Theoretical Physics, 63(2), 707–710. https://doi.org/10.1143/ptp.63.707
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