Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth

Abstract

We report on the fabrication of highly integrated semipolar {10 1- 1} GaN micro-pyramid light-emitting diode (LED) arrays on a c-plane sapphire substrate obtained via confined selective area growth (SAG). The cathodoluminescence (CL) revealed that the micro-pyramid arrays were under a severe local strain and potential fluctuations were observed depending on the location of the pyramid facets. The emissive region in the micro-pyramid facets was also found to be different in the monochromatically captured CL images. Furthermore, the electroluminescence (EL) of the micro-pyramid LED arrays had a palpable emissive spectra for high indium composition compared to c-plane LEDs, and optical polarization switching was also observed. © 2011 The Electrochemical Society.