Reply to "Comment on 'A unified explanation for secondary ion yields' and 'Mechanism of the SIMS matrix effect"'

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Abstract

Comments made in the preceding paper are critically discussed. It is argued that conclusions reached in our earlier papers were conservative and justified within our experimental accuracy. Negative-ion yields under cesium bombardment scale with surface cesium concentration and electron affinity in a manner analogous to the scaling of positive-ion yields with surface oxygen concentration and ionization potential. Fluorine is shown to be an exception, due probably to saturation effects.

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Williams, P., Deline, V. R., Evans, C. A., & Katz, W. (1981). Reply to “Comment on ‘A unified explanation for secondary ion yields’ and 'Mechanism of the SIMS matrix effect”’. Journal of Applied Physics, 52(1), 530–532. https://doi.org/10.1063/1.328452

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