Abstract
The structure of tubular GaN coaxially grown on ZnO nanorods with thickness of 6-12 nm was investigated using x-ray absorption fine structure (XAFS) at the Ga K edge. The XAFS measurements revealed that the GaN had a distorted-wurtzite structure, and that there were more distortions in the bond length of Ga-Ga pairs than in Ga-N pairs. However, no extra disorders were observed in any of the pairs. These results strongly suggest that Ga atoms first bonded to the ZnO template. Unlike other techniques, the XAFS determines structure around a selected species atom in nano-heterostructures. © 2006 American Institute of Physics.
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CITATION STYLE
Han, S. W., Yoo, H. J., An, S. J., Yoo, J., & Yi, G. C. (2006). Local structure around Ga in ultrafine GaN/ZnO coaxial nanorod heterostructures. Applied Physics Letters, 88(11). https://doi.org/10.1063/1.2185627
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