Memristive Behavior in Magnetic Elements Separated by Thin Non-Magnetic Spacer Layer

Abstract

Memristance due to domain wall displacement following spin polarization of current through two magnetic elements with a thin non-magnetic spacer layer in between has been studied in this paper. A domain wall is a type of spin structure appearing between two magnetic domains. When spin polarized current interacts with the second layer it produces a change of resistance which depends on the relative orientation of the magnetic moments in layers. Analytical simulation results on 10 nm sample size domain wall have been obtained under the impression of magnetic field and spin polarization of current. The non-linear pinched hysteresis loop obtained as currentvoltage characteristics shows linearity at high frequencies.