Challenges and opportunities for HfO X based resistive random access memory

Y. S. Chen; H. Y. Lee; P. S. Chen; C. H. Tsai; P. Y. Gu; T. Y. Wu; K. H. Tsai; S. S. Sheu; W. P. Lin; C. H. Lin; P. F. Chiu; W. S. Chen; F. T. Chen; C. Lien; M. J. Tsai

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Challenges and opportunities for HfO X based resistive random access memory

Technical Digest - International Electron Devices Meeting, IEDM (2011)

DOI: 10.1109/IEDM.2011.6131649

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Abstract

The binary oxide based resistive memories showing superior electrical performances on the resistive switching are reviewed in this paper. The status and challenges of the HfO X based resistive device with excellent memory properties are presented. Several future challenges for the filamentary type switching device are also addressed. © 2011 IEEE.

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Chen, Y. S., Lee, H. Y., Chen, P. S., Tsai, C. H., Gu, P. Y., Wu, T. Y., … Tsai, M. J. (2011). Challenges and opportunities for HfO X based resistive random access memory. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2011.6131649

Challenges and opportunities for HfO X based resistive random access memory

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