A new mechanism for interstistitial migration

Abstract

It is shown theoretically that the equilibrium position of an interstitial ion may depend upon its charge state. It is proposed that migration of this type of defect through the lattice may occur via a succession of changes of charge state. Possible instances where the mechanism might occur in diffusion and radiation damage studies in diamond, silicon and germanium are discussed, but a definitive confirmation of the mechanism has not yet been found. The mechanism can occur for other types of defects and in semiconductors and insulators in general. © 1972.