Effect of oxygen binding energy on the stability of indium-gallium-zinc- oxide thin-film transistors

Abstract

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc- oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis. © 2012 ETRI.