Abstract
The high-quality InN epiilms and InN microdisks have been grown with InGaN buffer layers at low temperatures by plasma-assisted molecular beam epitaxy. The samples were analyzed using X-ray difraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence. The characteristics of the InN epiilms and InN microdisks were studied, and the role of InGaN bufer was evaluated.
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CITATION STYLE
Yang, C.-C., Lo, I., Shih, C.-H., Hu, C.-H., Wang, Y.-C., Lin, Y.-C., … Jang, D.-J. (2017). Growth and Characteristics of High-quality InN by Plasma- Assisted Molecular Beam Epitaxy. In Modern Technologies for Creating the Thin-film Systems and Coatings. InTech. https://doi.org/10.5772/65812
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