Low temperature a-SiC/Si direct bonding technology for MEMS/NEMS

Abstract

A low temperature (450°C) amorphous, hydrogenated silicon carbide (a-SiC:H) thin film transfer technology by way of a-SiC:H/Si direct bonding is described. Compared to traditional thin film bonding and transfer processes, the proposed approach does not rely on IC-incompatible substances or high process temperatures to form the bond. Due to the ultra-smooth a-SiC surfaces, a CMP step normally used in traditional direct bonding is not required. Using this approach, prototype structures, such as nano-gap channels and vacuum-sealed, micron-deep reservoirs with a-SiC films as capping layers have been successful fabricated. ©2007 IEEE.