GaAs growth properties on V-grooved Si substrates

Abstract

GaAs growth properties and first successful maskless selective growth on the etched groove Si substrates are reported. No crystal growth occurs on the {111} Si sidewalls of the V grooves, and the GaAs layers grow only on the {100} planes. The cross-sectional shapes of the selective grown layer depend on the direction of the V grooves. The selectivity also remains even in Al 0.3Ga0.7As-grown layers. The selective growth mechanisms are discussed.