Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes

Abstract

We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300 μm. We find that the contact resistance can be as low as 100 Ω cm with narrowly spread fluctuations. For comparison, we have also performed scaling experiments on similar gold-contacted devices, and found that the reproducibility of FETs with nickel electrodes is largely superior. These results indicate that nickel is a very promising electrode material for the reproducible fabrication of low resistance contacts in organic FETs. © 2006 American Institute of Physics.