Journal ArticleOPEN ACCESS

Electron Tomography Study on Nanoscale HfO x /AlO y -based Resistive Switching Device

  • Zhang J
  • Ercius P
  • Zhang P
  • et al.
Microscopy and Microanalysis (2017) 23(S1) 1492-1493
DOI: 10.1017/s1431927617008121
N/ACitations
Citations of this article
3Readers
Mendeley users who have this article in their library.

Cite

CITATION STYLE

APA

Zhang, J., Ercius, P., Zhang, P., Luo, J., Kim, K., Zhang, M., & Williams, R. S. (2017). Electron Tomography Study on Nanoscale HfO x /AlO y -based Resistive Switching Device. Microscopy and Microanalysis, 23(S1), 1492–1493. https://doi.org/10.1017/s1431927617008121

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free