Effect of Growth Temperature on Structural Quality of In-Rich In x Al 1−x N Alloys on Si (111) Substrate by RF-MOMBE

Abstract

In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In 0.8 AlM 0.2 N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of [ 2 ̅ 110] I n A l N // [ 1 1 ̅ 0 ] S i . Also, the growth rate around ~0.25 μ m/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.