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Impedance and admittance characteristics of Bi2S3 nanowire arrays

IOP Conference Series: Materials Science and Engineering (2013) 49(1)
DOI: 10.1088/1757-899X/49/1/012007
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Abstract

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied. © Published under licence by IOP Publishing Ltd.

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Katkevics, J., Kunakova, G., Viksna, A., Holmes, J. D., & Erts, D. (2013). Impedance and admittance characteristics of Bi2S3 nanowire arrays. In IOP Conference Series: Materials Science and Engineering (Vol. 49). https://doi.org/10.1088/1757-899X/49/1/012007

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