Abstract
The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling. © 2011 American Institute of Physics.
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CITATION STYLE
Ray, M. P., Baldwin, J. W., Feygelson, T. I., Butler, J. E., & Pate, B. B. (2011). Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond. Review of Scientific Instruments, 82(5). https://doi.org/10.1063/1.3595678
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