Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction

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Abstract

Void free epitaxial-CoSi 2 with nano-thickness has been successfully fabricated on narrow Si(lOO) substrates surrounded by shallow trench isolation (STI) using a capped titanium mediated epitaxy method. The suicide is epitaxial with a CoSi 2(110)IISi( 100) crystal orientation. Void growth in the narrow silicon lines under the film edges due to an anomalous creep effect in the presence of a localized tensile stress between CoSi 2 and Si was suppressed completely by optimizing the initial rapid thermal annealing (RTA) thermal budget, and ensuring that no voids nucleated prior to the selective wet clean and second higher-temperature RTA process. The epitaxial Co-silicided n/p metal oxide semiconductor field effect transistors show excellent device performance. © 2004 The Electrochemical Society, All rights reserved.

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Ho, C. S., Pey, K. L., Tung, C. H., Zhang, B. C., Tee, K. C., Karunasiri, G., & Chua, S. J. (2004). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction. Electrochemical and Solid-State Letters, 7(11). https://doi.org/10.1149/1.1798191

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