Defect analysis and performance evaluation of photovoltaic modules using quantitative electroluminescence imaging

Abstract

This paper presents a defect analysis and performance evaluation of photovoltaic (PV) modules using quantitative electroluminescence imaging (EL). The study analyzed three common PV technologies: thin-film, monocrystalline silicon, and polycrystalline silicon. Experimental results indicate that monocrystalline silicon panels have the lowest degradation rate, ranging from 0.861% to 0.886%, compared to thin-film panels, which range from 1.39% to 1.53%, and polycrystalline panels, which range from 1.32% to 1.62%. The primary defects in thin-film technology include the formation of small shunts that gradually accumulate, causing shading and obstructing current flow, thereby reducing efficiency. For monocrystalline and polycrystalline technologies, defects include oxidation leading to loss of connection, layer wrinkles causing shading, and the accumulation of dust and animal waste. The study also demonstrates the effectiveness of using EL to identify micro-defects with high accuracy. The comprehensive quantitative EL method not only assesses defects with high accuracy but also offers practical insights for improving maintenance strategies and performance in tropical climates.