Effect of Strain on Thermal Conductivity of Si Thin Films

Abstract

Nonequilibrium molecular dynamics (NEMD) simulations are employed to gain an understanding of the effect of strain on the thermal conductivity of Si thin films. The analysis shows that the strain has an appreciable influence on the thermal conductivity of Si thin films. The thermal conductivity decreases as the tensile strain increases and increases as the compressive strain increases. The decrease of the phonon velocities and surface reconstructions generated under strain could explain well the effects of strain on the thermal conductivity of Si thin films.