Influence of the precursor materials on the structural properties of poly-Si thin films obtained by aluminium-induced crystallization

Abstract

The process of aluminium-induced crystallization (AIC) has attracted increasing scientific interest in the last decade, because of the possible application of the resulting poly-Si films in different devices, e.g. solar cells, thin film transistors (TFTs), image sensors, bio-application, etc. In the present paper, a study of the influence of the precursor layers - the interfacial oxide layer formed by different methods, and a-Si:H - on the structural properties of poly-Si films prepared by AIC is presented. The influence of the temperature of deposition and the hydrogen content in the a-Si:H precursor layers and the optical and structural properties of the obtained poly-Si films are presented as well. © 2009 Springer Science + Business Media B.V.