Fast neutron bombardment induced semiconductor-metal electron transition in lead selenide

Abstract

We have studied the electrical and galvanomagnetic properties of p-PbSe single crystals irradiated with fast neutrons. Changes in the temperature dependence of the resistivity and the Hall constant show evidence of the metal-semiconductor electron transition. Subsequent annealing at 350-390 K leads to a partial recovery of the initial properties and the reverse electron transition. © 2004 MAIK "Nauka/Interperiodica".