MIS Silicon Solar Cells

Abstract

Inserting a thin insulating layer between the metal and the semiconductor of a Schottky solar cell produces a MIS cell which can be inherently as efficient as a p-n junction solar cell. Open circuit voltages in excess of 600 mV are obtained for a range of silicon resistivities. The structure can be further developed to produce MISIM solar cells which can be fabricated very simply. Experimental results indicate that both the MIS and MISIM structures are suited for polycrystalline substrates. © 1978 The Japan Society of Applied Physics.