Poly-si nanowire nonvolatile memory with nanocrystal indiumGalliumZincOxide charge-trapping layer

Abstract

This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indiumgalliumzincoxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the FowlerNordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 104s at 85 °C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications. © 2006 IEEE.