Abstract
The annealing characteristics of resistive Cr74Si24W2N films were investigated at different nitrogen contents. In addition to studies of the stability up to about 450°C, the high temperature stability was measured at storage up to about 600°C, especially over the resistivity range 1800-2700 μΩ cm. As to the resistance drift, continuation of the annealing processes in the internal part of the films dominates during temperature storage down to about 100 K below the annealing temperature. At lower temperatures surface processes prevail. In favourable cases the resistance drift at 540 °C 100 h amounts to about 3%. © 1992.
Cite
CITATION STYLE
Brückner, W., Grießmann, H., Mönch, J. I., Schubert, G., & Heinrich, A. (1992). High temperature stability of CrSi(W)N films. Thin Solid Films, 221(1–2), 140–146. https://doi.org/10.1016/0040-6090(92)90807-N
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
