Performance analysis of Ti-doped In2O3thin films prepared by various doping concentrations using RF magnetron sputtering for light-emitting device

Abstract

The influences of doping amounts of TiO2 on the structure and electrical properties of In2O3 films were experimentally studied. In this study, titanium-doped indium oxide (ITiO) conductions were deposited on glass substrate by the dual-target-type radio frequency magnetron sputtering (RFS) system under different conditions of Ti-doped In2O3 targets, from Ti-0.5 wt% to Ti-5.0 wt%, along with 10 mTorr and 300 W pressure of RF power control that was used as a cost-effective transparent electrochemiluminescence (ECL) cell. From this process, the correlation between structural, optical, and electrical properties is reported. It was found that the best 1.14×10-4 Ω cm of resistivity was from Ti-2.5 wt% with the highest carrier concentration (1.15 × 1021 cm-3), Hall mobility (46.03 cm2/V·s), relatively transmittance (82%), and ECL efficiency (0.43 lm·W-1) with well crystalline structured and smooth morphology. As a result, researchers can be responsible for preparing ITiO thin films with significantly improved microstructure and light intensity performance for the effectiveness of the display devices, as well as its simple process and high performance.